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| FDMB3800N Dual N-Channel PowerTrench(R) MOSFET October 2006 FDMB3800N Dual N-Channel PowerTrench(R) MOSFET 30V, 4.8A, 40m Features General Description Max rDS(on) = 40m at VGS = 10V, ID = 4.8A Max rDS(on) = 51m at VGS = 4.5V, ID = 4.3A Fast switching speed Low gate Charge High performance trench technology for extremely low rDS(on) High power and current handling capability. RoHS Compliant tm These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Q2 D2 D2 D1 D1 MicroFET 3X1.9 5 6 4 3 G2 S2 G1 S1 Q1 7 8 2 1 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Power Dissipation Power Dissipation -Continuous -Pulsed TA = 25C TA = 25C Note 1a) (Note 1b) TA = 25C (Note 1a) Ratings 30 20 4.8 9 1.6 0.75 -55 to +150 Units V V A W C Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 80 165 C/W Package Marking and Ordering Information Device Marking 3800 Device FDMB3800N Package MicroFET3X1.9 Reel Size 7'' Tape Width 8mm Quantity 3000 units (c)2006 Fairchild Semiconductor Corporation FDMB3800N Rev. C1 1 www.fairchildsemi.com FDMB3800N Dual N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VDS = 24V, VGS = 0V TJ = 55C VGS = 20V, VDS = 0V 30 24 1 10 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 4.8A VGS = 4.5V, ID = 4.3A VGS = 10V, ID = 4.8A, TJ = 125C VDS = 5V, ID = 4.8A 1 1.9 -4 32 41 43 14 40 51 61 S m 3 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS =15V, VGS = 0V, f = 1MHz f = 1MHz 350 90 40 3 465 120 60 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 5V Gate to Source Gate Charge Gate to Drain "Miller" Charge VGS = 0V to 5V VDD = 15V ID = 7.5A VDD = 15V, ID = 1A VGS = 10V, RGEN = 6 8 5 21 2 4 1.0 1.5 16 10 34 10 5.6 ns ns ns ns nC nC nC Drain-Source Diode Characteristics IS VSD trr Qrr Maximum Continuous Drain - Source Diode Forward Current Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 1.25A (Note 2) 0.8 17 7 1.25 1.2 A V ns nC IF = 4.8A, di/dt = 100A/s Notes: 1: RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a. 80C/W when mounted on a 1 in2 pad of 2 oz copper b. 165C/W when mounted on a minimum pad of 2 oz copper 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. FDMB3800N Rev.C1 2 www.fairchildsemi.com FDMB3800N Dual N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 10 6.0V 3.5V NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 2.8 4.5V 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 2 4 6 8 ID, DRAIN CURRENT (A) 8 VGS = 3.0V 6 3.0V 4 3.5V 4.0V 4.5V 6.0V 2 2.5V 0 0 0.25 0.5 0.75 1 1.25 VDS, DRAIN-SOURCE VOLTAGE (V) 10V 10 Figure 1. On Region Characteristics 1.6 DRAIN TO SOURCE ON-RESISTANCE (OHM) Figure 2. Normalized On - Resistance vs Drain Current and Gate Voltage 0.102 ID = 2.4A 0.092 0.082 0.072 0.062 0.052 0.042 0.032 0.022 TJ = 25oC o ID, DRAIN CURRENT (A) NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 4.8A VGS = 10V 1.4 1.2 1 TJ = 125 C 0.8 0.6 -50 -25 0 25 50 75 100 o 125 150 2 3 4 5 6 7 8 9 10 Figure 3. Normalized On - Resistance vs Junction Temperature 15 I S , REVERSE DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On- Resistance vs Gate to Source Voltage 10 VDS = 5V ID, DRAIN CURRENT (A) 12 TJ = -55oC 25oC o 125 C VGS = 0V 1 9 0.1 TJ = 125oC 6 0.01 25oC -55oC 3 0.001 0 1.5 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMB3800N Rev.C1 3 www.fairchildsemi.com FDMB3800N Dual N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 4.8A 8 VDS = 10V 20V 15V 600 500 CAPACITANCE (pF) 400 300 200 100 f = 1MHz VGS = 0 V Ciss 6 4 Coss 2 0 0 1 2 3 4 5 6 7 8 Qg, GATE CHARGE (nC) Crss 0 0 4 8 12 16 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics 6 5 ID, DRAIN CURRENT (A) Figure 8. Capacitance vs Drain to Source Voltage 100 ID, DRAIN CURRENT (A) 10 rDS(on) LIMIT 100us 1ms 10ms 4 3 2 1 0 25 50 VGS = 10V 1 VGS = 10V SINGLE PULSE RJA = 165oC/W TJ = 25oC 0.01 0.1 1 10 VGS = 4.5V 100ms 1s 10s DC 100 0.1 RJA = 80C/W VDS, DRAIN-SOURCE VOLTAGE (V) 75 100 125 o TA, AMBIENT TEMPERATURE ( C) 150 Figure 9. Forward Bias Safe Operating Area Figure 10. Maximum Continuous Drain Current vs Ambient Temperature P(pk), PEAK TRANSIENT POWER (W) 180 150 120 90 60 30 0 0.0001 SINGLE PULSE RJA = 165C/W TA= 25C 0.001 0.01 0.1 1 10 100 1000 t, PULSE WIDTH (s) Figure 11. Single Pulse Maximum Power Dissipation FDMB3800N Rev.C1 4 www.fairchildsemi.com FDMB3800N Dual N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted ZJA, NORMALIZED THERMAL IMPEDANCE 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 P(pk) t1 t2 Peak TJ = TA + PDM *RJA* ZJA Duty Cycle, D = t1 / t2 SINGLE PULSE 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve FDMB3800N Rev.C1 5 www.fairchildsemi.com FDMB3800N Dual N-Channel PowerTrench(R) MOSFET Dimensional Outline and Pad Layout FDMB3800N Rev.C1 6 www.fairchildsemi.com FDMB3800N Dual N-Channel PowerTrench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I20 FDMB3800N Rev. C1 7 www.fairchildsemi.com |
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